Datasheet > 2SB1145

2SB1145

更新时间： 2024-01-04 06:01:45

品牌	Logo	应用领域
锦美电子 - JMNIC		晶体晶体管
页数	文件大小	规格书
3页	41K
描述
Silicon PNP Power Transistors

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中文翻译

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数据手册

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2SB1145 数据手册

JMnic

Product Specification

Silicon PNP Power Transistors

2SB1145

DESCRIPTION

·With TO-220F package

·High DC current gain.

·DARLINGTON

·Low collector saturation voltage

APPLICATIONS

·For high current driver and power

driver applications

PINNING

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-220F) and symbol

Absolute maximum ratings (Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

-120

-6

UNIT

Open base

Open collector

-3

I_CM

Collector current-peak

-5

T_C=25℃

T_a=25℃

P_C

Collector dissipation

T_j

Junction temperature

Storage temperature

150

-55~150

℃

T_stg

12 3

中文翻译

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与2SB1145相关器件

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2SB1145_15	JMNIC	获取价格	Silicon PNP Power Transistors
2SB1145_2014	JMNIC	获取价格	Silicon PNP Power Transistors
2SB1148	PANASONIC	获取价格	Silicon PNP epitaxial planar type(For low-voltage switching)
2SB1148/2SB1148A	ETC	获取价格	2SB1148. 2SB1148A - PNP Transistor
2SB1148A	PANASONIC	获取价格	Silicon PNP epitaxial planar type(For low-voltage switching)
2SB1148AH	PANASONIC	获取价格	Power Bipolar Transistor, 10A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB1148AP	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 40V V(BR)CEO \| 10A I(C) \| TO-221VAR
2SB1148AQ	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 40V V(BR)CEO \| 10A I(C) \| TO-221VAR
2SB1148AR	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 40V V(BR)CEO \| 10A I(C) \| TO-221VAR
2SB1148ATX	PANASONIC	获取价格	Power Bipolar Transistor, 10A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,