Datasheet > 2SB1132Q-G

2SB1132Q-G

更新时间： 2024-11-13 20:38:55

品牌	Logo	应用领域
WEITRON		/
页数	文件大小	规格书
5页	323K
描述
Transistor

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中文翻译

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技术参数
数据手册

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2SB1132Q-G 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

2SB1132Q-G 数据手册

2SB1132

PNP Plastic-Encapsulate Transistors

SOT-89

* “G” Lead(Pb)-Free

1. BASE

2. COLLECTOR

3. EMITTER

(Ta=25 C)

ABSOLUTE MAXIMUM RATINGS

Rating

Unit

Symbol

Value

-40

-32

-5.0

Vdc

Collector-Emitter Voltage

VCBO

Vdc

Collector-Base Voltage

Emitter-Base Voltage

VCEO

VEBO

A(DC)

-1.0

-2.0

0.5

Collector Current

A (Pulse)*

Collector Power Dissipation

Storage Temperature

Junction Temperature,

-55 to +150

150,

T , Tstg

* Single pulse Pw = 100ms

DEVICE MARKING

2SB1132P=BAP, 2SB1132Q=BAQ, 2SB1132R=BAR

ELECTRICAL CHARACTERISTICS

Characteristics

Symbol

Min

Max

Unit

Collector-Base Breakdown Voltage (I = -50 uAdc, I =0)

-40

Vdc

(BR)CBO

-32

= -1 mAdc, I

Vdc

Collector-Emitter Breakdown Voltage (I

=0)

(BR)CEO

-5.0

Emitter-Base Breakdown Voltage (I = -50 uAdc, I =0)

(BR)EBO

uAdc

-0.5

Collector Cutoff Current (V = -20Vdc, I =0)

CBO

Emitter Cutoff Current (V = -4.0 Vdc, I =0)

EBO

WEITRON

http://www.weitron.com.tw

12 3 4 5

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