Datasheet > 2SB1125

2SB1125

更新时间： 2024-10-15 18:09:11

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	1041K
描述
PNP Darlington Transistors

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中文翻译

获取价格

数据手册

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2SB1125 数据手册

SMD Type

Transistors

PNP Transistors

2SB1125

SOT-89

Unit:mm

1.70 0.1

■ Features

● Collector Current Capability IC=-0.7A

● Collector Emitter Voltage V^CEO=-50V

● Complements the 2SD1625

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Symbol

Rating

-80

Unit

VCBO

VCEO

VEBO

Collector - Emitter Voltage

Emitter - Base Voltage

-50

-10

Collector Current - Continuous

Collector Current - Pulse

-0.7

-2

0.5

Collector Power Dissipation

℃

(Note.1)

1.3

Junction Temperature

150

Storage Temperature range

stg

-55 to 150

Note.1: mounted on ceramic substrate (250mm²X0.8mm)

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Ic= -100 μA， I =0

Ic= -10 mA， RBE=∞

= -100μA， I =0

CB= -40 V , I =0

EB= -8V , I =0

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

-80

-50

-10

CBO

EBO

-0.1

-1.2

-2

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

BE(sat)

=-100mA, I

=-0.1mA

C=-100mA, I

CE= -2V, I

^CE=- 2V, I

= -50mA

5000

3000

DC current gain

hFE

C= -500mA

Collector output capacitance

Transition frequency

Cob

^CB= -10V, f=1MHz

CB= -5V, I =-50mA

170

MHZ

■ Marking

Marking

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