Datasheet > 2SB1122

2SB1122

更新时间： 2024-09-16 12:53:39

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
2页	111K
描述
Adoption of FBET process Very small size making it easy to provide highdensity hybrid ICS

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2SB1122 数据手册

Product specification

2SB1122

Features

Adoption of FBET process..

Very small size making it easy to provide highdensity

hybrid IC’s.

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

-60

-50

-5

-1

-2

Collector current (pulse)

Collector dissipation

I^CP

P^C

500

Jumction temperature

Storage temperature

T^j

150

T^stg

-55 to +150

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