Datasheet > 2SB1119

2SB1119

更新时间： 2024-10-15 18:10:03

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
4页	1330K
描述
SOT-89

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中文翻译

获取价格

数据手册

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2SB1119 数据手册

2SB1119

BIPOLAR TRANSISTOR (PNP)

FEATURES

 LF Amplifier,Electronic Governor Applications

 Surface Mount device

SOT-89

MECHANICAL DATA



Case: SOT-89

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.055 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_CBO

Value

-25

Unit

Collector-Base Voltage

V_CEO

Collector-Emitter Voltage

-25

V_EBO

Emitter-Base Voltage

-5

Collector Current

-1

Collector Power Dissipation

500

°C

Junction Temperature

Storage Temperature

150

TSTG

-55 ~+150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

I_C=-10uA，I_E=0

V(BR)CBO

V(BR)CEO

V(BR)EBO

I_CBO

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

-25

-5

I_C=-1mA，I_B=0

I_E=-10uA，I_C=0

-0.1

560

uA V_CB=-20V, I_E=0

uA V_EB=-4V, I_C=0

V_CE=-2V, I_C=-50mA

V_CE=-2V, I_C=-1A

Emitter cut-off current

I_EBO

h_FE1

100

DC current gain

h_FE2

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

I_C=-500mA，I_B=-50mA

V_CE(sat)

V_BE(sat)

f_T

-0.1 -0.3

-0.85 -1.2

180

MHz V_CE=-10V, I_C=-50mA,

V_CB=-10V, I_E=0, f=1

Collector output capacitance

C_ob

MHz

CLASSIFICATION OF h_FE

Rank

Range

100-200

140-280

200-400

Marking

1 / 4

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2SB1119R	TRSYS	获取价格	Transistor
2SB1119-R	KEXIN	获取价格	PNP Transistors
2SB1119S	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 25V V(BR)CEO \| 1A I(C) \| SOT-89
2SB1119-S	KEXIN	获取价格	PNP Transistors
2SB1119T	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 25V V(BR)CEO \| 1A I(C) \| SOT-89
2SB1119-T	KEXIN	获取价格	PNP Transistors
2SB1119U	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 25V V(BR)CEO \| 1A I(C) \| SOT-89
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