Datasheet > 2SB1119

2SB1119

更新时间： 2024-10-15 14:55:43

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
3页	1284K
描述
SOT-89-3L

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数据手册

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2SB1119 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

SOT-89-3L

2SB1119 TRANSISTOR (PNP)

1. BASE

FEATURES

2. COLLECTOR

3. EMITTER

Small Flat Package

LF Amplifier, Electronic Governor Applications

MARKING

B B

Solid dot = Green molding compound device.

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

-25

Unit

Collector-Emitter Voltage

-25

Emitter-Base Voltage

-5

Collector Current

-1

P_C

Collector Power Dissipation

500

℃/W

℃

R_θJA

T_J,T_stg

Thermal Resistance From Junction To Ambient

Operation Junction and Storage Temperature Range

250

-55~+150

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C=-10µA,I_E=0

Min

-25

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=-1mA,I_B=0

I_E=-10µA,I_C=0

V_CB=-20V,I_E=0

-100

560

Emitter cut-off current

I_EBO

V_EB=-4V,I_C=0

h_FE(1)

V_CE=-2V, I_C=-50mA

V_CE=-2V, I_C=-1A

I_C=-500mA,I_B=-50mA

V_CB=-10V,I_E=0, f=1MHz

100

DC current gain

h_FE(2)

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector output capacitance

V_CE(sat)

V_BE(sat)

C_ob

-0.7

-1.2

f_T

V^CE=-10V,I^C=-50mA,

180

MHz

Transition frequency

CLASSIFICATION OF h_FE(1)

RANK

RANGE

100–200

140–280

200–400

280–560

MARKING

www.jscj-elec.com

Rev. - 2.2

12 3

中文翻译

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