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2SB1116 PDF预览

2SB1116

更新时间: 2024-09-30 17:01:11
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
4页 346K
描述
50V,1A,General Purpose PNP Bipolar Transistor

2SB1116 数据手册

 浏览型号2SB1116的Datasheet PDF文件第2页浏览型号2SB1116的Datasheet PDF文件第3页浏览型号2SB1116的Datasheet PDF文件第4页 
Product Specification  
PNP Silicon Epitaxial Planar Transistor  
2SB1116  
FEATURES  
Low VCE(sat)  
High PD in small dimension with general-purpose  
Complementary transistor with 2SD1616  
SOT-23  
ORDERING INFORMATION  
Type No.  
2SB1116  
Marking  
1116  
Package Code  
SOT-23  
MAXIMUM RATING @ TA = 25°C unless otherwise specified  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
Units  
V
Collector-Base Voltage  
-60  
Collector-Emitter Voltage  
-50  
V
Emitter-Base Voltage  
-6  
-1  
V
Continuous Collector Current  
Peak Collector Current  
A
ICM  
-2  
A
PC  
Collector Power Dissipation  
Thermal Resistance Junction-to-Air *1  
Thermal Resistance Junction-to-Case *1  
Thermal Resistance Junction-to-Lead *1  
Junction Temperature Range  
Storage Temperature Range  
350  
mW  
°C/W  
°C/W  
°C/W  
°C  
RθJA  
RθJC  
RθJL  
TJ  
200  
100  
125  
-55 ~ +150  
-55 ~ +150  
TSTG  
°C  
Note 1: The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper  
STM0168A: April 2023 [1.0]  
www.gmesemi.com  
1

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