Datasheet > 2SB1116

2SB1116

更新时间： 2024-09-14 14:54:51

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
2页	660K
描述
双极型晶体管

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数据手册

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2SB1116 数据手册

2SB1116/1116A(PNP)

TO-92 Bipolar Transistors

TO-92

1. EMITTER

COLLECTOR

3. BASE

Features

ꢀ

High Collector Power Dissipation .

^ꢀComplementary to 2SD1616/2SD1616A

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Parameter

Value

Units

Symbol

Collector-Base Voltage 2SB1116

2SB1116A

-60

-80

-50

-60

-6

V_CBO

Collector-Emitter Voltage 2SB1116

2SB1116A

V_CEO

V_EBO

I_C

Emitter-Base Voltage

Collector Current -Continuous

-1

0.75

Dimensions in inches and (millimeters)

Collector Power Dissipation

Junction Temperature

Storage Temperature

P_C

℃

150

T_j

-55-150

T_stg

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

2SB1116

2SB1116A

-60

-80

Collector-base breakdown voltage

V_(BR)CBOI_C=-100μA,I_E=0

2SB1116

2SB1116A

-50

-60

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

V_(BR)CEOI_C=-1mA,I_B=0

V_(BR)EBOI_E=-100μA,I_C=0

-6

V_CB=-60V,I_E=0

2SB1116

I_CBO

-0.1

μA

V_CB=-80V,I_E=0

2SB1116A

I_EBO

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE(sat)

V_BE

f_T

V_EB=-6V,I_C=0

-0.1

600

V_CE=-2V,I_C=-0.1A

V_CE=-2V,I_C=-1A

135

DC current gain

Collector-emitter saturation voltage

Base -emitter saturation voltage

Base -emitter voltage

Transition frequency

Collector output capacitance

Turn-on time

I_C=-1A,I_B=-50mA

V_CE=-2V,I_C=-0.05A

V_CE=-2V,I_C=-0.1A

V_CB=-10V,I_E=0,f=1MHz

-0.3

-1.2

-0.7

-0.6

MHz

C_ob

t_on

0.07

0.7

_CC=-10V,I_C=-0.1A,I_B1=-I_B2=-0.01A,

_BE(Off)=2to3V

Storage time

t_s

Fall time

t_f

0.07

CLASSIFICATION OF h_FE(1)

Rank

135-270

200-400

300-600

Range

http://www.lgesemi.com

Revision:20170701-P1

mail:lge@lgesemi.com

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