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2SB1106 PDF预览

2SB1106

更新时间: 2024-11-16 06:18:27
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管放大器局域网
页数 文件大小 规格书
3页 117K
描述
Silicon PNP Power Transistors

2SB1106 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Is Samacsys:NBase Number Matches:1

2SB1106 数据手册

 浏览型号2SB1106的Datasheet PDF文件第2页浏览型号2SB1106的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
2SB1105  
DESCRIPTION  
·With TO-220C package  
·DARLINGTON  
·High DC durrent gain  
·Complement to type 2SD1605  
APPLICATIONS  
·Designed for use in low frequency  
power amplifier applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
3
Emitter  
Absoluaximum ratings(Tc=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current-DC  
Collector power dissipation  
Junction temperature  
Storage temperature  
CONDITIO
VALUE  
-120  
-120  
-7  
UNIT  
V
Open emitter  
Open base  
V
Open collector  
V
-3  
A
TC=25  
PC  
30  
W
Tj  
150  
Tstg  
-55~150  

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