2SB1103

更新时间： 2024-11-24 07:29:59

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管放大器局域网
页数	文件大小	规格书
3页	43K
描述
Silicon PNP Power Transistors

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中文翻译

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数据手册

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2SB1103 数据手册

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB1103

DESCRIPTION

·With TO-220C package

·DARLINGTON

·High DC durrent gain

·Low collector saturation voltage

·Complement to type 2SD1603

APPLICATIONS

·Designed for use in low frequency

power amplifier applications

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Emitter

Absolute maximum ratings(Tc=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current-DC

Collector current-peak

Collector power dissipation

Junction temperature

Storage temperature

CONDITIONS

VALUE

-60

UNIT

Open emitter

Open base

-60

Open collector

-7

-8

I_CM

-12

T_C=25℃

P_C

℃

T_j

150

-55~150

T_stg

12 3

中文翻译

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2SB1103_15	JMNIC	获取价格	Silicon PNP Power Transistors
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