Datasheet > 2SB1070A-P

2SB1070A-P

更新时间： 2024-02-07 17:33:40

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	1001K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SB1070A-P 数据手册

SMD Type

Transistors

PNP Transistors

2SB1070A

TO-252

Unit: mm

+0.15

-0.15

6.50

+0.1

-0.1

2.30

+0.8

-0.7

■ Features

+0.2

5.30

-0.2

0.50

● Low collector-emitter saturation voltage VCE(sat)

● High-speed switching.

0.127

max

+0.1

-0.1

0.80

0.1

0.60⁺_-

1 Base

2.3

4.60

+0.15

-0.15

2 Collector

3 Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

-50

-40

-5

Collector Current - Continuous

Collector current -Pulse

-4

-8

Collector Power Dissipation

Junction Temperature

1.3

150

℃

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

-50

-40

-5

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= -100 μA， I

Ic= -10 mA，I =0

= -100μA， I =0

CB= -50V , I =0

^EB= -5V , I =0

E=0

CBO

EBO

-50

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

BE(sat)

=-2 A, I

=-100mA

-0.5

-1.5

260

=-2 A, I

CE= -2V, I

^CE= -2V, I

= -1 A

DC current gain

hFE

C= -100 mA

Turn-on time

Storage time

Fall time

0.3

0.4

0.1

150

= -2 A,IB1 = -0.2 A,IB2 = 0.2 A,

stg

CC = -20 V

Transition frequency

CE = −5 V, I

= − 0.5 A, f = 10 MHz

MHz

■ Classification of hfe(1)

Type

2SB1070A-Q

90-180

2SB1070A-P

130-260

Range

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2SB1070Q	PANASONIC	获取价格	Power Bipolar Transistor, 4A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2
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