2SB1056

更新时间： 2024-09-23 06:17:35

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	129K
描述
Silicon PNP Power Transistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SB1056 数据手册

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB1056

DESCRIPTION

·With TO-3PFa package

·Complement to type 2SD1487

·High f_T

·Satisfactory linearity of h_FE

·Wide area of safe operation

APPLICATIONS

·For high power amplifier applications

PINNING

DESCRIPTION

Base

Collector

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

-140

-5

UNIT

Open emitter

Open base

Open collector

-7

I_CP

Collector current-peak

-12

T_C=25℃

P_C

Collector power dissipation

T_j

Junction temperature

Storage temperature

150

-55~150

℃

T_stg

12 3

中文翻译

下载PDF

与2SB1056相关器件

型号	品牌	获取价格	描述	数据表
2SB1056_15	JMNIC	获取价格	Silicon PNP Power Transistors
2SB1056_2014	JMNIC	获取价格	Silicon PNP Power Transistors
2SB1056P	ISC	获取价格	Transistor
2SB1057	PANASONIC	获取价格	SI NPN TRIPLE DIFFUSED PLANAR HIGH POWER AMPLIFIER
2SB1057	ISC	获取价格	Silicon PNP Power Transistors
2SB1057	SAVANTIC	获取价格	Silicon PNP Power Transistors
2SB1057	JMNIC	获取价格	Silicon PNP Power Transistors
2SB1057_15	JMNIC	获取价格	Silicon PNP Power Transistors
2SB1057_2014	JMNIC	获取价格	Silicon PNP Power Transistors
2SB1058	HITACHI	获取价格	LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD1489