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2SB1025DJUR PDF预览

2SB1025DJUR

更新时间: 2024-11-08 13:04:11
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
6页 66K
描述
1000mA, 80V, PNP, Si, SMALL SIGNAL TRANSISTOR, UPAK-3

2SB1025DJUR 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.42
外壳连接:COLLECTOR最大集电极电流 (IC):1 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):100JESD-30 代码:R-PSSO-F3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:SINGLE晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):140 MHz
Base Number Matches:1

2SB1025DJUR 数据手册

 浏览型号2SB1025DJUR的Datasheet PDF文件第2页浏览型号2SB1025DJUR的Datasheet PDF文件第3页浏览型号2SB1025DJUR的Datasheet PDF文件第4页浏览型号2SB1025DJUR的Datasheet PDF文件第5页浏览型号2SB1025DJUR的Datasheet PDF文件第6页 
2SB1025  
Silicon PNP Epitaxial  
REJ03G0661-0200  
(Previous ADE-208-1036)  
Rev.2.00  
Aug.10.2005  
Application  
Low frequency power amplifier  
Complementary pair with 2SD1418  
Outline  
RENESAS Package code: PLZZ0004CA-A  
(Package name: UPAK R  
)
1
2
1. Base  
3
2. Collector  
3. Emitter  
4. Collector (Flange)  
4
*UPAK is a trademark of Renesas Technology Corp.  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
Symbol  
VCBO  
Ratings  
Unit  
V
–120  
VCEO  
–80  
V
VEBO  
–5  
V
IC  
–1  
A
1
Collector peak current  
iC(peak)  
PC*2  
*
–2  
A
Collector power dissipation  
Junction temperature  
1
W
°C  
°C  
Tj  
150  
Storage temperature  
Tstg  
–55 to +150  
Notes: 1. PW 10 ms, Duty cycle 20%  
2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)  
Rev.2.00 Aug 10, 2005 page 1 of 5  

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