生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-F3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.42 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 1 A |
集电极-发射极最大电压: | 80 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 100 | JESD-30 代码: | R-PSSO-F3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | SINGLE | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 140 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1025DK | ETC |
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TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-243 | |
2SB1025-DK | RENESAS |
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SMALL SIGNAL TRANSISTOR | |
2SB1025-DK | HITACHI |
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SMALL SIGNAL TRANSISTOR | |
2SB1025DKTL | RENESAS |
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1000mA, 80V, PNP, Si, SMALL SIGNAL TRANSISTOR, UPAK-3 | |
2SB1025DKTL | HITACHI |
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Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, UPAK-3 | |
2SB1025DKTR | HITACHI |
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Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, UPAK-3 | |
2SB1025DKTR | RENESAS |
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1000mA, 80V, PNP, Si, SMALL SIGNAL TRANSISTOR, UPAK-3 | |
2SB1025DKUL | HITACHI |
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Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, UPAK-3 | |
2SB1025DKUR | HITACHI |
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暂无描述 | |
2SB1025-H | KEXIN |
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PNP Transistors |