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2SB1025DJTL-E PDF预览

2SB1025DJTL-E

更新时间: 2024-11-10 06:24:55
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体小信号双极晶体管ISM频段放大器
页数 文件大小 规格书
6页 66K
描述
Silicon PNP Epitaxial

2SB1025DJTL-E 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
零件包装代码:UPAK包装说明:SMALL OUTLINE, R-PSSO-F3
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.41
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):1 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):30
JESD-30 代码:R-PSSO-F3JESD-609代码:e6
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):1 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:TIN BISMUTH
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:20晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):140 MHz
Base Number Matches:1

2SB1025DJTL-E 数据手册

 浏览型号2SB1025DJTL-E的Datasheet PDF文件第2页浏览型号2SB1025DJTL-E的Datasheet PDF文件第3页浏览型号2SB1025DJTL-E的Datasheet PDF文件第4页浏览型号2SB1025DJTL-E的Datasheet PDF文件第5页浏览型号2SB1025DJTL-E的Datasheet PDF文件第6页 
2SB1025  
Silicon PNP Epitaxial  
REJ03G0661-0200  
(Previous ADE-208-1036)  
Rev.2.00  
Aug.10.2005  
Application  
Low frequency power amplifier  
Complementary pair with 2SD1418  
Outline  
RENESAS Package code: PLZZ0004CA-A  
(Package name: UPAK R  
)
1
2
1. Base  
3
2. Collector  
3. Emitter  
4. Collector (Flange)  
4
*UPAK is a trademark of Renesas Technology Corp.  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
Symbol  
VCBO  
Ratings  
Unit  
V
–120  
VCEO  
–80  
V
VEBO  
–5  
V
IC  
–1  
A
1
Collector peak current  
iC(peak)  
PC*2  
*
–2  
A
Collector power dissipation  
Junction temperature  
1
W
°C  
°C  
Tj  
150  
Storage temperature  
Tstg  
–55 to +150  
Notes: 1. PW 10 ms, Duty cycle 20%  
2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)  
Rev.2.00 Aug 10, 2005 page 1 of 5  

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