是否Rohs认证: | 符合 | 生命周期: | Not Recommended |
零件包装代码: | UPAK | 包装说明: | SMALL OUTLINE, R-PSSO-F3 |
针数: | 4 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.41 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 1 A | 集电极-发射极最大电压: | 80 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 30 |
JESD-30 代码: | R-PSSO-F3 | JESD-609代码: | e6 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 1 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | TIN BISMUTH |
端子形式: | FLAT | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 20 | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 140 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1025DJTR-E | RENESAS |
获取价格 |
2SB1025DJTR-E | |
2SB1025DJUR | RENESAS |
获取价格 |
1000mA, 80V, PNP, Si, SMALL SIGNAL TRANSISTOR, UPAK-3 | |
2SB1025DK | ETC |
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TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-243 | |
2SB1025-DK | RENESAS |
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SMALL SIGNAL TRANSISTOR | |
2SB1025-DK | HITACHI |
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SMALL SIGNAL TRANSISTOR | |
2SB1025DKTL | RENESAS |
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1000mA, 80V, PNP, Si, SMALL SIGNAL TRANSISTOR, UPAK-3 | |
2SB1025DKTL | HITACHI |
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Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, UPAK-3 | |
2SB1025DKTR | HITACHI |
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Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, UPAK-3 | |
2SB1025DKTR | RENESAS |
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1000mA, 80V, PNP, Si, SMALL SIGNAL TRANSISTOR, UPAK-3 | |
2SB1025DKUL | HITACHI |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, UPAK-3 |