Datasheet > 2SB1025-J

2SB1025-J

更新时间： 2024-11-09 01:09:15

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	953K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SB1025-J 数据手册

SMD Type

Transistors

PNP Transistors

2SB1025

■ Features

1.70 0.1

● Low frequency power amplifier

● Complementary to 2SD1418

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Symbol

Rating

-120

-80

-5

Unit

VCBO

VCEO

VEBO

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

-1

Collector current -Pulse

Collector Power Dissipation

Junction Temperature

(Note.1)

-2

℃

150

Storage Temperature range

stg

-55 to 150

Note.1: PW ≤ 10ms,Duty cycle≤ 20℅

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

-120

-80

-5

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= -100 μA， I

Ic= -1 mA，R^BE=∞

= -100μA， I =0

CB= -100V , I =0

^EB= -5V , I =0

=-500mA, I =-50mA

E=0

CBO

EBO

-10

-0.1

-1

Collector-emitter saturation voltage

Base - emitter saturation voltage

Base - emitter voltage

CE(sat)

BE(sat)

-1.2

-0.9

320

^CE= -5V, I

CE= -5V, I

C= -150 mA

C= -500 mA

DC current gain

hFE

Collector output capacitance

Transition frequency

CB = –10V, I

= 0, f = 1MHz

^CE= -5V, I = -150mA

140

MHz

■ Classification of hfe(1)

Type

Range

Marking

2SB1025-H

60-120

2SB1025-J

2SB1025-K

160-320

100-200

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