Datasheet > 2SB1002-J

2SB1002-J

更新时间： 2024-09-19 01:12:11

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	620K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SB1002-J 数据手册

SMD Type

Transistors

PNP Transistors

2SB1002

■ Features

1.70 0.1

● Low frequency power amplifier

● Complementary to 2SD1368

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Symbol

Rating

-70

-50

-6

Unit

VCBO

VCEO

VEBO

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

-1

Collector current -Pulse

Collector Power Dissipation

Junction Temperature

(Note.1)

-1.5

℃

150

Storage Temperature range

stg

-55 to 150

Note.1: PW ≤ 10ms,Duty cycle≤ 20℅

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

-70

-50

-6

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= -100 μA， I

Ic= -1 mA，R^BE=∞

= -100μA， I =0

^CB= -60V , I =0

EB= -5V , I =0

E=0

CBO

EBO

-0.1

-0.6

-1.2

320

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

=-1 A, I

=-100mA

=-1 A, I

hFE

^CE= -2V, I

CB = –10V, I

CE= -2V, I = -10mA

C= -100 mA

100

Collector output capacitance

Transition frequency

= 0, f = 1MHz

150

MHz

■ Classification of hfe

Type

Range

Marking

2SB1002-H

100-200

2SB1002-J

160-320

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