Datasheet > 2SB0939|2SB939

2SB0939|2SB939

更新时间： 2022-01-18 16:06:00

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	96K
描述
Power Device - Power Transistors - General-Purpose power amplification

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2SB0939|2SB939 数据手册

Power Transistors

2SB0939 (2SB939), 2SB0939A (2SB939A)

Silicon PNP epitaxial planar type Darlington

Unit: mm

For midium-speed power switching

8.5 0.2

6.0 ^0.2

3.4 0.3

Complementary to 2SD1262, 2SD1262A

1.0 0.1

■ Features

• High forward current transfer ratio h_FE

0 to 0.4

• High-speed switching

R = 0.5

1.0 ^0.1

0.8 0.1

• N type package enabling direct soldering of the radiating fin to the

printed circuit board, etc. of small electronic equipment.

2.54 0.3

1.4 0.1

0.4 0.1

5.08 0.5

(8.5)

(6.0)

■ Absolute Maximum Ratings T_C= 25°C

1.3

Parameter

Symbol

Rating

−60

Unit

2SB0939

2SB0939A

2SB0939

2SB0939A

V_CBO

Collector-base voltage

(Emitter open)

−80

(6.5)

V_CEO

−60

Collector-emitter voltage

(Base open)

1 : Base

2 : Collector

3 : Emitter

−80

Emitter-base voltage (Collector open) V_EBO

−7

N-G1 Package

Collector current

I_C

I_CP

P_C

−8

Note) Self-supported type package is also prepared.

Peak collector current

Collector power dissipation

−12

Internal Connection

T_a= 25°C

1.3

Junction temperature

Storage temperature

T_j

150

°C

T_stg

−55 to +150

■ Electrical Characteristics T_C= 25°C 3°C

Parameter

Symbol

Conditions

Min

−60

−80

Typ

Max

Unit

2SB0939

2SB0939A

2SB0939

2SB0939A

V_CEO

I_C= −30 mA, I_B= 0

Collector-emitter voltage

(Base open)

Collector-base cut-off

current (Emitter open)

I_CBO

V_CB= −60 V,I_E= 0

V_CB= −80 V,I_E= 0

V_EB= −7 V,I_C= 0

−100

−2

µA

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

I_EBO

h_FE1

V_CE= −3 V, I_C= −4 A

V_CE= −3 V, I_C= −8 A

2000

500

10 000



h_FE2

Base-emitter saturation voltage

Collector-emitter saturation voltage

Transition frequency

Turn-on time

V_BE(sat)I_C= −4 A,I_B= −8 mA

V_CE(sat)I_C= −4 A, I_B= −8 mA

−2

−1.5

f_T

t_on

t_stg

t_f

V_CE= −10 V, I_C= −0.5 A, f = 1 MHz

0.5

MHz

µs

I_C= −4 A,

Strage time

I_B1= −8 mA, I_B2= 8 mA

V_CC= −50 V

µs

Fall time

µs

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Rank classification

Rank

h_FE1

2000 to 5000 4000 to 10000

Note) The part number in the parenthesis shows conventional part number.

SJD00020BED

Publication date: March 2003

12 3 4

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