Datasheet > 2SB053020MTJY

2SB053020MTJY

更新时间： 2024-10-14 06:19:47

品牌	Logo	应用领域
士兰微 - SILAN		肖特基二极管
页数	文件大小	规格书
1页	18K
描述
2SB053020MTJY SCHOTTKY BARRIER DIODE CHIPS

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2SB053020MTJY 数据手册

2SB053020MTJY

2SB053020MTJY SCHOTTKY BARRIER DIODE CHIPS

DESCRIPTION

2SB053020MTJY is a schottky barrier diode chips

fabricated in silicon epitaxial planar technology;

Low power losses, high efficiency;

Guard ring construction for transient protection;

Low forward voltage drop;

High ESD capability;

Chip Topography and Dimensions

High surge capability;

La: Chip Size: 530mm;

Lb: Pad Size: 420mm;

Packaged products are widely used in switching

power suppliers, polarity protection circuits and

other electronic circuits;

ORDERING SPECIFICATIONS

Chip Size:5m3m0 X 530mm;

Product Name

Specification

Chip Thickness: 155±20um

For Au and AlSi wire bonding

package

Gross die:39000 Die/Wafer(5 inch)

2SB053020MTJY

ABSOLUTE MAXIMUM RATINGS

Parameters

Symbol

Ratings

Unit

Maximum Repetitive Peak Reverse Voltage

Average Forward Rectified Current

Peak Forward Surge Current@8.3ms

Maximum Operation Junction Temperature

Storage Temperature Range

RRM

0.5

6.5

125

FAV

FSM

°C

STG

•40~125

ELECTRICAL CHARACTERISTICS (Tamb=25°C)

Parameters

Reverse Voltage

Symbol

Test Conditions

I =150uA

Min.

••

Max.

••

Unit

I =100mA

0.375

0.44

Forward Voltage

Reverse Current

I =500mA

••

V =10V

••

V =20V

••

150

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

REV:1.0

2007.10.24

Http: www.silan.com.cn

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