Datasheet > 2SB023040MLJY

2SB023040MLJY

更新时间： 2024-10-14 05:57:31

品牌	Logo	应用领域
士兰微 - SILAN		肖特基二极管
页数	文件大小	规格书
1页	18K
描述
SCHOTTKY BARRIER DIODE CHIPS

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2SB023040MLJY 数据手册

2SB023040MLJY

2SB023040MLJY SCHOTTKY BARRIER DIODE CHIPS

DESCRIPTION

2SB023040MLJY is a schottky barrier diode chips

fabricated in silicon epitaxial planar technology;

Low power losses, high efficiency;

Guard ring construction for transient protection;

High ESD capability;

High surge capability;

Chip Topography and Dimensions

Packaged products are widely used in switching

power suppliers, polarity protection circuits and

other electronic circuits;

La: Chip Size: 230mm;

Lb: Pad Size: 140mm;

ORDERING SPECIFICATIONS

Chip Size:2m3m0 X 230mm;

Chip Thickness: 155±20mm

Product Name

Specification

For Au and AlSi wire bonding

package

2SB023040MLJY

ABSOLUTE MAXIMUM RATINGS

Parameters

Symbol

Ratings

Unit

Maximum Repetitive Peak Reverse Voltage

Average Forward Rectified Current

Peak Forward Surge Current@8.3ms

Maximum Operation Junction Temperature

Storage Temperature Range

RRM

°C

FAV

200

125

FSM

•40~125

°C

STG

ELECTRICAL CHARACTERISTICS (Tamb=25°C)

Parameters

Reverse Voltage

Symbol

Test Conditions

Min.

••

Max.

••

Unit

I =0.1m

Forward Voltage

Reverse Current

I =1mA

0.37

0.5

V =30V

••

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

REV:1.0

2007.09.18

Http: www.silan.com.cn

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