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2SA970_07

更新时间： 2024-02-23 19:15:03
品牌 Logo 应用领域
东芝 - TOSHIBA 音频放大器
页数 文件大小 规格书
4页 629K
描述
Low Noise Audio Amplifier Applications

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2SA970_07 数据手册

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2SA970  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)  
2SA970  
Low Noise Audio Amplifier Applications  
Unit: mm  
•
Low noise: NF = 3dB (typ.) R = 100 Ω, V  
= −6 V, I = −100 μA,  
CE C  
G
f = 1 kHz  
: NF = 0.5dB (typ.) R = 1 kΩ, V  
= −6 V, I = −100 μA,  
C
G
CE  
f = 1 kHz  
•
•
•
High DC current gain: h  
= 200~700  
FE  
High breakdown voltage: V  
= −120 V  
CEO  
Low pulse noise. Low 1/f noise  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
−120  
−120  
−5  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
I
−100  
−20  
mA  
mA  
mW  
°C  
°C  
C
Base current  
I
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
300  
C
T
j
125  
JEDEC  
JEITA  
TO-92  
T
stg  
−55~125  
SC-43  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
TOSHIBA  
2-5F1B  
Weight: 0.21 g (typ.)  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= −120 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
I
V
V
⎯
⎯
⎯
⎯
⎯
−0.1  
−0.1  
⎯
μA  
μA  
V
CBO  
CB  
EB  
E
Emitter cut-off current  
I
= −5 V, I = 0  
C
EBO  
(BR) CEO  
Collector-emitter breakdown voltage  
V
I
= −1 mA, I = 0  
−120  
C
B
h
FE  
(Note)  
DC current gain  
V
= −6 V, I = −2 mA  
200  
⎯
700  
CE  
C
Collector-emitter saturation voltage  
Base-emitter voltage  
V
I
= −10 mA, I = −1 mA  
⎯
⎯
⎯
⎯
⎯
−0.65  
100  
4.0  
−0.3  
⎯
V
V
CE (sat)  
C
B
V
V
V
V
V
= −6 V, I = −2 mA  
C
BE  
CE  
CE  
CB  
CE  
Transition frequency  
f
= −6 V, I = −1 mA  
⎯
MHz  
pF  
T
C
Collector output capacitance  
C
= −10 V, I = 0, f = 1 MHz  
⎯
ob  
E
= −6 V, I = −0.1 mA, f = 10 Hz,  
C
⎯
⎯
⎯
⎯
⎯
3
6
2
R
= 10 kΩ  
G
V
R
= −6 V, I = −0.1 mA, f = 1 kHz,  
CE  
C
Noise figure  
NF  
dB  
= 10 kΩ  
G
V
R
= −6 V, I = −0.1 mA, f = 1 kHz,  
CE  
C
⎯
= 100 Ω  
G
Note: h classification GR: 200~400, BL: 350~700  
FE  
1
2007-11-01  
1234

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