Datasheet > 2SA940

2SA940

更新时间： 2023-12-06 20:08:08

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
2页	629K
描述
双极型晶体管

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中文翻译

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技术参数
数据手册

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2SA940 技术参数

极性：	PNP	Collector-emitter breakdown voltage：	150
Collector Current - Continuous：	1.5	DC current gain - Min：	40
DC current gain - Max：	140	Transition frequency：	4
Package：	TO-220AB	Storage Temperature Range：	-55-150
class：	Transistors

2SA940 数据手册

2SA940(PNP)

TO-220 Transistor

TO-220

1. BASE

2. COLLECTOR

3. EMITTER

Features

Wide safe Operating Area.

Complementary to 2SC2703

Dimensions in inches and (millimeters)

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Paramenter

Value

-150

-5

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

-1.5

P_C

1.5

℃

T_j

150

T_stg

-55-150

ELECTRICAL CHARACTERISTICS (Tamb=25℃

unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

-150

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=-100μA, I_E=0

V_(BR)CEOI_C=-1mA, I_B=0

V_(BR)EBOI_E=-100μA, I_C=0

I_CBO

I_EBO

h_FE

V_CB=-120V, I_E=0

V_EB=-5V, I_C=0

-10

μA

Emitter cut-off current

DC current gain

V_CE=-10V, I_C=-0.5A

I_C=-0.5A, I_B=-50mA

V_CE=-10V, I_C=-0.5A

V_CB=-10V, I_E=0, f=1MHz

140

-1.5

-0.85

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

V_BE

-0.65

Transition frequency

f_T

MHz

Collector output capacitance

C_ob

http://www.lgesemi.com

Revision:20170701-P1

mail:lge@lgesemi.com

中文翻译

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