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2SA933AS-BP PDF预览

2SA933AS-BP

更新时间: 2024-09-28 13:04:11
品牌 Logo 应用领域
美微科 - MCC 晶体晶体管
页数 文件大小 规格书
2页 103K
描述
Transistor,

2SA933AS-BP 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.84
JESD-609代码:e3端子面层:Matte Tin (Sn)
Base Number Matches:1

2SA933AS-BP 数据手册

 浏览型号2SA933AS-BP的Datasheet PDF文件第2页 
M C C  
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20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
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TM  
2SA933AS-Q  
2SA933AS-R  
2SA933AS-S  
Micro Commercial Components  
Features  
Lead Free Finish/Rohs Compliant ("P"Suffix designates  
Compliant. See ordering information)  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0 and MSL rating 1  
Marking:  type number  
PNP  
x
Plastic-Encapsulate  
Transistors  
x
Power dissipation: PCM = 0.2W(Tamb=25?)  
Collector current: ICM = -0.15A  
Collector-base voltage: V(BR)CBO =-60V  
Operating and storage junction temperature range  
TJ, Tstg: -55? to + 150?  
TO-92S  
A
E
Electrical Characteristics @ 25R Unless Otherwise Specified  
Symbol  
Parameter  
Collector-Emitter Voltage  
(IC=-50IA, IE=0)  
Min  
Typ  
Max  
Unit  
VCEO  
-50  
---  
---  
V
Collector-Base Voltage  
(IC=-1IA, IB=0)  
B
VCBO  
-60  
---  
---  
V
V
Emitter-Base Voltage  
(IE=-50IA, IC=0)  
VEBO  
ICBO  
IEBO  
hFE  
-6.0  
---  
---  
---  
---  
---  
---  
---  
---  
Collector cut-off Current  
(VCB=-20V, IE=0)  
-0.1  
-0.1  
560  
-0.5  
---  
IA  
IA  
---  
Emitter cut-off Current  
(VEB=-5V, IC=0)  
DC current gain  
(VCE=-2V, IC=-0.1A)  
Collector-Emitter Saturation Voltage  
(IC=-2A, IB=-0.1A)  
Transition Frequency  
(VCE=2.0Vdc, IC=0.5Adc)  
---  
C
120  
---  
VCE(sat)  
fT  
V
120  
MHz  
1
2
3
CLASSIFICATION OF hFE  
D
Rank  
Q
R
S
Range  
120-270  
180-390  
270-560  
1.EMITTER  
2.COLLECTOR  
3.BASE  
G
DIMENSIONS  
INCHES  
MIN  
MM  
DIM  
A
B
MAX  
MIN  
MAX  
---  
NOTE  
.16  
.12  
4.00  
3.00  
C
.59  
---  
15.00  
D
E
G
.02  
.08  
.20  
0.45  
2.00  
5.00  
www.mccsemi.com  
1 of 2  
Revision: 4  
2008/02/01  

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