Datasheet > 2SA877

2SA877

更新时间： 2024-02-02 09:20:52

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	49K
描述
isc Silicon PNP Power Transistor

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2SA877 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

2SA877

DESCRIPTION

·High Power Dissipation-

: P_C= 100W(Max.)@T_C=25℃

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= -80V(Min.)

APPLICATIONS

·Designed for power amplifier and general purpose

applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

-80

UNIT

-80

-6

Collector Current-Continuous

Base Current-Continuous

-10

I_B

-4

Collector Power Dissipation

@T_C=25℃

P_C

100

℃

T_j

Junction Temperature

Storage Temperature

150

-65~150

T_stg

isc Website：www.iscsemi.cn

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