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2SA844

更新时间: 2024-02-13 01:23:15
品牌 Logo 应用领域
永而佳 - WINNERJOIN 晶体晶体管
页数 文件大小 规格书
1页 133K
描述
TRANSISTOR (PNP)

2SA844 技术参数

生命周期:Transferred包装说明:CYLINDRICAL, O-PBCY-W3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.44Is Samacsys:N
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:55 V
配置:SINGLE最小直流电流增益 (hFE):160
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-W3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子形式:WIRE端子位置:BOTTOM
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

2SA844 数据手册

  
RoHS  
2SA844  
2SA844  
TRANSISTOR (PNP)  
TO-92  
FEATURES  
Power dissipation  
1. EMITTER  
2. COLLECTOR  
3. BASE  
PCM : 0.3 W (Tamb=25)  
Collector current  
ICM: -0.1 A  
Collector-base voltage  
(BR)CBO : -55 V  
1 2 3  
V
Operating and storage junction temperature range  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
Ic= -10µA , IE=0  
MIN  
-55  
-55  
-5  
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
Emitter cut-off current  
IC= -1mA , IB=0  
V
V
IE= -10µA, IC=0  
VCB= -18V , IE=0  
VEB= -2 V , IC=0  
VCE=-12V, IC= -2mA  
IC= -10mA, IB= -1 mA  
VCE= -12V, IC= -2mA  
-0.1  
-0.05  
800  
µA  
µA  
IEBO  
hFE  
160  
DC current gain  
VCE(sat)  
VBE(on)  
-0.5  
V
V
Collector-emitter saturation voltage  
Base-emitter voltage  
-0.75  
VCE=-12V, IC= -2mA  
150  
MHz  
Transition frequency  
f T  
CLASSIFICATION OF hFE  
Rank  
C
D
E
WEJ ELECTRONIC CO.,LTD  
160-320  
250-500  
400-800  
Range  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.  

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