Datasheet > 2SA817A

2SA817A

更新时间： 2024-10-15 14:52:27

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
2页	620K
描述
双极型晶体管

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中文翻译

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技术参数
数据手册

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2SA817A 技术参数

极性：	PNP	Collector-emitter breakdown voltage：	80
Collector Current - Continuous：	0.4	DC current gain - Min：	70
DC current gain - Max：	240	Transition frequency：	100
Package：	TO-92MOD	Storage Temperature Range：	-55-150
class：	Transistors

2SA817A 数据手册

2SA817A

TO-92MOD Transistor (PNP)

TO-92MOD

5.800

6.200

1. EMITTER

2. COLLECTOR

3. BASE

8.400

8.800

0.900

1.100

0.400

0.600

13.800

14.200

Features

1.500 TYP

Complementary to 2SC1627A.

Driver Stage Application of 30 to

35 Watts Amplifiers.

2.900

3.100

0.000

0.380

1.600

0.400

0.500

4.700

5.100

1.730

2.030

4.000

Dimensions in inches and (millimeters)

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

Parameter

Value

-80

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CBO

V_CEO

V_EBO

I_C

-80

-5

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

-400

800

℃

P_C

T_J

150

Storage Temperature

T_stg

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃

unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

-80

-5

MAX

UNIT

V_(BR)CBOI_C= -100 uA, I_E=0

V_(BR)CEOI_C= -5 mA, I_B=0

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)EBO

I_CBO

I_E= -100μA, I_C=0

V_CB= -50 V , I_E=0

V_EB= -5V , I_B=0

-0.1

240

μA

Collector cut-off current

I_EBO

h_FE(1)

h_FE(2)

V_CE= -2V, I_C= -50mA

V_CE= -2V, I_C= -200mA

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat) I_C=-200 mA, I_B= -20mA

-0.4

-0.8

V_BE

f_T

V_CE= -2V , I_C= -5mA

V_CE=-10V, I_C=-10mA

V_CB= -10 V , f=1MH_Z

-0.55

Transition frequency

Out capacitance

100

MHz

Cob

CLASSIFICATION OF h_FE(1)

Rank

Range

70-140

120 - 240

http://www.lgesemi.com

Revision:20170701-P1

mail:lge@lgesemi.com

中文翻译

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