2SA817
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA817
Audio Frequency Amplifier Applications
Unit: mm
•
•
Complementary to 2SC1627.
Suitable for driver of 20~25 watts audio amplifiers.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Symbol
Rating
Unit
V
CBO
V
CEO
V
EBO
−80
−80
V
V
Collector-emitter voltage
Emitter-base voltage
Collector current
−5
V
I
−300
−60
mA
mA
mW
°C
°C
C
Base current
I
B
Collector power dissipation
Junction temperature
Storage temperature range
P
600
C
T
j
150
T
stg
−55~150
JEDEC
JEITA
TO-92
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
= −50 V, I = 0
Min
Typ.
Max
Unit
Collector cut-off current
I
V
V
⎯
⎯
⎯
⎯
⎯
−0.1
−0.1
⎯
μA
μA
V
CBO
CB
EB
E
Emitter cut-off current
I
= −5 V, I = 0
C
EBO
(BR) CEO
Collector-emitter breakdown voltage
V
I
= −5 mA, I = 0
−80
C
B
h
FE (1)
(Note)
V
V
= −2 V, I = −50 mA
70
⎯
240
CE
C
DC current gain
h
= −2 V, I = −200 mA
40
⎯
⎯
⎯
⎯
−0.4
−0.8
⎯
FE (2)
CE
C
Collector-emitter saturation voltage
Base-emitter voltage
V
I
= −200 mA, I = −20 mA
V
V
CE (sat)
C
B
V
V
V
V
= −2 V, I = −5 mA
−0.55
70
⎯
BE
CE
CE
CB
C
Transition frequency
f
= −10 V, I = −10 mA
100
14
MHz
pF
T
C
Collector output capacitance
C
= −10 V, I = 0, f = 1 MHz
⎯
⎯
ob
E
Note: h
classification O: 70~140, Y: 120~240
FE (1)
1
2007-11-01