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2SA817_07 PDF预览

2SA817_07

更新时间: 2024-10-14 03:56:27
品牌 Logo 应用领域
东芝 - TOSHIBA 音频放大器
页数 文件大小 规格书
3页 357K
描述
Audio Frequency Amplifier Applications

2SA817_07 数据手册

 浏览型号2SA817_07的Datasheet PDF文件第2页浏览型号2SA817_07的Datasheet PDF文件第3页 
2SA817  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)  
2SA817  
Audio Frequency Amplifier Applications  
Unit: mm  
Complementary to 2SC1627.  
Suitable for driver of 20~25 watts audio amplifiers.  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
80  
80  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
5  
V
I
300  
60  
mA  
mA  
mW  
°C  
°C  
C
Base current  
I
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
600  
C
T
j
150  
T
stg  
55~150  
JEDEC  
JEITA  
TO-92  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
SC-43  
TOSHIBA  
2-5F1B  
Weight: 0.21 g (typ.)  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and  
individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= −50 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
I
V
V
0.1  
0.1  
μA  
μA  
V
CBO  
CB  
EB  
E
Emitter cut-off current  
I
= −5 V, I = 0  
C
EBO  
(BR) CEO  
Collector-emitter breakdown voltage  
V
I
= −5 mA, I = 0  
80  
C
B
h
FE (1)  
(Note)  
V
V
= −2 V, I = −50 mA  
70  
240  
CE  
C
DC current gain  
h
= −2 V, I = −200 mA  
40  
0.4  
0.8  
FE (2)  
CE  
C
Collector-emitter saturation voltage  
Base-emitter voltage  
V
I
= −200 mA, I = −20 mA  
V
V
CE (sat)  
C
B
V
V
V
V
= −2 V, I = −5 mA  
0.55  
70  
BE  
CE  
CE  
CB  
C
Transition frequency  
f
= −10 V, I = −10 mA  
100  
14  
MHz  
pF  
T
C
Collector output capacitance  
C
= −10 V, I = 0, f = 1 MHz  
ob  
E
Note: h  
classification O: 70~140, Y: 120~240  
FE (1)  
1
2007-11-01  

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