生命周期: | Active | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | 风险等级: | 5.77 |
最大集电极电流 (IC): | 1 A | 集电极-发射极最大电压: | 120 V |
JESD-30 代码: | R-PSFM-T3 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | PNP |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SA814O | ISC |
获取价格 |
暂无描述 | |
2SA815 | JMNIC |
获取价格 |
Silicon PNP Power Transistors | |
2SA815 | ISC |
获取价格 |
Silicon PNP Power Transistors | |
2SA815 | SAVANTIC |
获取价格 |
Silicon PNP Power Transistors | |
2SA815 | TOSHIBA |
获取价格 |
SILICON PNP EPITAXIAL BASE MESA TYPE | |
2SA816 | MICRO-ELECTRONICS |
获取价格 |
PNP/NPN SILICON PLANAR EPITAXIAL POWER TRANSISTOR | |
2SA816Y | MICRO-ELECTRONICS |
获取价格 |
Transistor, | |
2SA817 | TOSHIBA |
获取价格 |
TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APPLICATIONS) | |
2SA817 | MICRO-ELECTRONICS |
获取价格 |
Small Signal Bipolar Transistor, 0.3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, | |
2SA817_07 | TOSHIBA |
获取价格 |
Audio Frequency Amplifier Applications |