Datasheet > 2SA812

2SA812

更新时间： 2024-04-09 19:02:53

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	478K
描述
50V,0.1A,General Purpose PNP Bipolar Transistor

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数据手册

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2SA812 数据手册

PNP Silicon Epitaxial Planar Transistor

2SA812

Features



Excellent h_FELinearity

High Voltage

Complementary to 2SC1623

Mechanical Data



Case: SOT-23

Molding Compound: UL Flammability Classification Rating 94V-0

SOT-23

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

Ordering Information

Part Number

Package

SOT-23

Shipping Quantity

Marking Code

2SA812

3000 pcs / Tape & Reel

M4/M5/M6/M7

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Continuous Collector Current

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

-60

-50

-5

-100

-200

Peak Collector Current

I_CM

Thermal Characteristics

Parameter

Power Dissipation( T_A= 25°C )

Symbol

P_D

Value

200

Unit

°C /W

°C

Thermal Resistance Junction-to-Air ^*1

Thermal Resistance Junction-to-Case ^*1

Thermal Resistance Junction-to-Lead ^*1

Junction Temperature Range

R_θJA

R_θJC

R_θJL

T_J

290

190

210

-55 ~ +150

Storage Temperature Range

T_STG

°C

Note 1: The data tested by surface mounted on a 1 inch²FR-4 board with 2OZ copper

STM0066A: November 2023 [2.0]

www.gmesemi.com

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