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2SA812 PDF预览

2SA812

更新时间: 2024-11-28 17:02:03
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
5页 478K
描述
50V,0.1A,General Purpose PNP Bipolar Transistor

2SA812 数据手册

 浏览型号2SA812的Datasheet PDF文件第2页浏览型号2SA812的Datasheet PDF文件第3页浏览型号2SA812的Datasheet PDF文件第4页浏览型号2SA812的Datasheet PDF文件第5页 
PNP Silicon Epitaxial Planar Transistor  
2SA812  
Features  
Excellent hFE Linearity  
High Voltage  
Complementary to 2SC1623  
Mechanical Data  
Case: SOT-23  
Molding Compound: UL Flammability Classification Rating 94V-0  
SOT-23  
Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208  
Ordering Information  
Part Number  
Package  
SOT-23  
Shipping Quantity  
Marking Code  
2SA812  
3000 pcs / Tape & Reel  
M4/M5/M6/M7  
Maximum Ratings (@ TA = 25°C unless otherwise specified)  
Parameter  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Continuous Collector Current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
Unit  
V
-60  
-50  
V
-5  
V
-100  
-200  
mA  
mA  
Peak Collector Current  
ICM  
Thermal Characteristics  
Parameter  
Power Dissipation( TA = 25°C )  
Symbol  
PD  
Value  
200  
Unit  
mW  
°C /W  
°C /W  
°C /W  
°C  
Thermal Resistance Junction-to-Air *1  
Thermal Resistance Junction-to-Case *1  
Thermal Resistance Junction-to-Lead *1  
Junction Temperature Range  
RθJA  
RθJC  
RθJL  
TJ  
290  
190  
210  
-55 ~ +150  
-55 ~ +150  
Storage Temperature Range  
TSTG  
°C  
Note 1: The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper  
STM0066A: November 2023 [2.0]  
www.gmesemi.com  
1

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