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2SA812 PDF预览

2SA812

更新时间: 2024-11-28 14:54:55
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
4页 713K
描述
SOT-23

2SA812 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.54
Base Number Matches:1

2SA812 数据手册

 浏览型号2SA812的Datasheet PDF文件第2页浏览型号2SA812的Datasheet PDF文件第3页浏览型号2SA812的Datasheet PDF文件第4页 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD  
SOT-23 Plastic-Encapsulate Transistors  
SOT-23  
2SA812 TRANSISTOR (PNP)  
1. BASE  
FEATURES  
2. EMITTER  
3. COLLECTOR  
z
z
z
Complementary to 2SC1623  
High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA)  
High Voltage: Vceo=-50V  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
Unit  
V
Collector-Base Voltage  
-60  
V
Collector-Emitter Voltage  
-50  
V
Emitter-Base Voltage  
-5  
Collector Current  
-100  
200  
625  
mA  
mW  
/W  
Collector Power Dissipation  
Thermal Resistance From Junction To Ambient  
PC  
RΘJA  
Operation Junction and  
Storage Temperature Range  
TJ,Tstg  
-55+150  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol Test conditions  
Min  
-60  
-50  
-5  
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
IC=-100μA, IE=0  
IC= -1mA, IB=0  
V
V
IE= -100μA, IC=0  
VCB=- 60 V, IE=0  
VEB= -5V, IC=0  
-0.1  
-0.1  
600  
μA  
μA  
Emitter cut-off current  
IEBO  
DC current gain  
hFE  
VCE=- 6V, IC= -1mA  
IC=-100mA, IB= -10mA  
IC=-1mA, VCE=-6V  
90  
Collector-emitter saturation voltage  
Base-emitter voltage  
VCE(sat)  
VBE  
-0.3  
-0.68  
V
V
-0.58  
Transition frequency  
V
CE=-6V, IC= -10mA  
180  
4.5  
MHz  
pF  
fT  
Collector output capacitance  
Cob  
VCB=-10V,IE=0,f=1MHz  
CLASSIFICATION OF hFE  
M4  
90-180  
M4  
M5  
135-270  
M5  
M6  
M7  
300-600  
M7  
Rank  
200-400  
M6  
Range  
Marking  
www.jscj-elec.com  
1
Rev. - 2.0  

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