Datasheet > 2SA812

2SA812

更新时间： 2024-10-15 14:52:39

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
2页	1124K
描述
双极型晶体管

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技术参数
数据手册

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2SA812 技术参数

极性：	PNP	Collector-emitter breakdown voltage：	50
Collector Current - Continuous：	0.1	DC current gain - Min：	90
DC current gain - Max：	600	Transition frequency：	180
Package：	SOT-23	Storage Temperature Range：	-55-150
class：	Transistors

2SA812 数据手册

2SA812

Silicon Epitaxial Planar Transistor

FEATURES

Commplementary to 2SC1623.

SOT-23

High DC current gain:h_FE=200typ.

(V_CE=-6.0V,I_C=-1.0mA)

SOT-23

Min

Dim

Max

3.10

1.50

2.70

High Voltage: V_CEO=-50V.

1.10

1.0 Typical

0.4 Typical

APPLICATIONS

Audio frequency, general purpose amplifier.

0.35

0.48

2.00

0.1

1.80

0.02

ORDERING INFORMATION

0.1 Typical

Type No.

2SA812

Marking

Package Code

2.20

2.60

All Dimensions in mm

M4/M5/M6/M7

SOT-23

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Units

V_CBO

Collector-Base Voltage

-60

V_CEO

V_EBO

I_C

Collector-Emitter Voltage

Emitter-Base Voltage

-50

-5

Collector Current -Continuous

Collector Dissipation

-100

℃

P_C

200

T_j,T_stg

Junction and Storage Temperature

-55 to +150

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN

TYP MAX UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

I_C=-100μA,I_E=0

-60

V_(BR)CEO

I_C=-1mA,I_B=0

-50

-5

V_(BR)EBO

I_E=-100μA,I_C=0

I_CBO

V_CB=-60V,I_E=0

-0.1

μA

Emitter cut-off current

I_EBO

V_EB=-5V,I_C=0

-0.1

600

DC current gain

h_FE

V_CE=-6V,I_C=-1mA

I_C=-100mA, I_B=-10mA

200

Collector-emitter saturation voltage

V_CE(sat)

-0.18 -0.3

Base-emitter voltage

Transition frequency

I_C=-1mA, V_CE=-6V

V_CE=-6V, I_C=-10mA

V_BE

f_T

-0.58 -0.62 -0.68

180

MHz

Collector output capacitance

V_CB=-10V,I_E=0,f=1MHz

C_ob

4.5

CLASSIFICATION OF h_FE(1)

Range

135-270

300-600

Marking

90-180

200-400

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

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与2SA812相关器件

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2SA812_0712	BL Galaxy Electrical	获取价格	Silicon Epitaxial Planar Transistor
2SA812_15	WINNERJOIN	获取价格	TRANSISTOR
2SA812A	RENESAS	获取价格	100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, SC-59, 3 PIN
2SA812-A	RENESAS	获取价格	100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, MINIMOLD PACKAGE-3
2SA812AM4	NEC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MINIMOL
2SA812A-M4	RENESAS	获取价格	100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, MINIMOLD PACKAGE-3
2SA812AM4-AT	NEC	获取价格	TRANSISTOR,BJT,PNP,50V V(BR)CEO,100MA I(C),SOT-346
2SA812AM4-T1B	NEC	获取价格	TRANSISTOR,BJT,PNP,50V V(BR)CEO,100MA I(C),SOT-346
2SA812AM4-T2B	NEC	获取价格	TRANSISTOR,BJT,PNP,50V V(BR)CEO,100MA I(C),SOT-346
2SA812AM5	NEC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MINIMOL