Datasheet > 2SA812

2SA812

更新时间： 2024-11-27 12:53:35

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描述
High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) High Voltage: VCEO = -50 V

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2SA812 数据手册

Product specification

2SA812

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA)

High Voltage: VCEO = -50 V

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector to base voltage

Symbol

VCBO

VCEO

VEBO

Rating

-60

Unit

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

power dissipation

-50

-5.0

-100

200

Junction temperature

Storage temperature range

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Collector cutoff current

Emitter cutoff current

DC current gain *

Symbol

ICBO

Testconditons

Min

Typ

200

Max

-0.1

600

Unit

VCB = -60 V, IE = 0 A

IEBO

VEB = -5.0 V, IC = 0 A

VCE = -6.0 V, IC = -1.0 mA

hFE

Collector saturation voltage

Base to emitter voltage

Output capacitance

VCE(sat) IC = -100 mA, IB = -10 mA

-0.18 -0.3

VBE

Cob

VCE = 6.0 V, IC = -1.0 mA

-0.58 -0.62 -0.68

VCE = -10 V, IE = 0 A, f = 1.0 MHz

VCE = -6.0 V, IE = 10 mA

4.5

Transition frequency

180

MHz

* Pulsed: PW

350 s, Duty Cycle

hFE Classification

Marking

hFE

90 180

200 400

135 270

300 600

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