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2SA812 PDF预览

2SA812

更新时间: 2024-11-27 12:36:27
品牌 Logo 应用领域
永而佳 - WINNERJOIN 晶体晶体管
页数 文件大小 规格书
1页 136K
描述
TRANSISTOR (PNP)

2SA812 数据手册

  
RoHS  
2SA812  
SOT-23-3L  
1. BASE  
2SA812 TRANSISTOR (PNP)  
2. EMITTER  
3. COLLECTOR  
FEATURES  
Power dissipation  
PCM  
:
0.2  
W (Tamb=25)  
2. 80¡ À0. 05  
1. 60¡ À0. 05  
Collector current  
ICM  
:
-0.1  
A
V
Collector-base voltage  
(BR)CBO : -60  
V
Operating and storage junction temperature range  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
MIN  
-60  
-50  
-5  
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
Ic=-100µA, IE=0  
Ic= -1mA, IB=0  
V
V
IE= -100µA, IC=0  
VCB=- 60 V , IE=0  
VEB= -5V , IC=0  
-0.1  
-0.1  
600  
µA  
µA  
IEBO  
Emitter cut-off current  
hFE  
VCE=- 6V, IC= -1mA  
IC=-100 mA, IB= -10mA  
IC=-1mA, VCE=-6V  
90  
DC current gain  
VCE(sat)  
VBE  
-0.3  
-0.68  
V
V
Collector-emitter saturation voltage  
Base-emitter voltage  
VCE=-6V, IC= -10mA  
180  
MHz  
Transition frequency  
fT  
CLASSIFICATION OF hFE  
WEJ ELECTRONIC CO.,LTD  
Marking  
Range  
M4  
M5  
M6  
M7  
90-180  
135-270  
200-400  
300-600  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.  

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