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2SA812 PDF预览

2SA812

更新时间: 2024-11-29 05:56:11
品牌 Logo 应用领域
WEITRON 晶体晶体管
页数 文件大小 规格书
3页 185K
描述
PNP General Purpose Transistors

2SA812 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
风险等级:5.15Base Number Matches:1

2SA812 数据手册

 浏览型号2SA812的Datasheet PDF文件第2页浏览型号2SA812的Datasheet PDF文件第3页 
2SA812  
PNP General Purpose Transistors  
3
P b  
Lead(Pb)-Free  
1
2
SOT-23  
MAXIMUM RATINGS(Ta=25°C)  
Rating  
Symbol  
Value  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-60  
V
CBO  
V
-50  
V
V
CEO  
V
-5.0  
EBO  
I
Collector Current - Continuous  
Total Device Dissipation  
-100  
200  
mA  
C
P
mW  
D
T =25°C  
A
°C  
°C  
T
j
+150  
Junction Temperature  
Storage Temperature  
T
-55 to +150  
stg  
WEITRON  
http://www.weitron.com.tw  
1/3  
08-Dec-06  

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