Datasheet > 2SA790U

2SA790U

更新时间： 2024-11-25 14:55:27

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
5页	936K
描述
功率三极管

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2SA790U 数据手册

2SA790U

PNP Silicon Epitaxial Planar Transistors

Features

• Very low collector-emitter saturation voltage V_CEsat

• High collector current capability IC and I_CM

• High collector current gain (h_FE) at high I_C

• High energy efficiency due to less heat generation

Applications

• Load switch

• Battery-driven devices

• Power management

• Charging circuits

Absolute Maximum Ratings (T_a= 25 )

Parameter

Symbol

-V_CBO

-V_CEO

-V_EBO

-I_C

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

Collector Current, Pulse

Power Dissipation

-I_CM

P_tot

Junction Temperature

Storage Temperature Range

T_j

150

T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

125

Unit

Thermal Resistance from Junction to Ambient ¹⁾

Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 5

Dated：11/07/2023 Rev: 02

12 3 4 5

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