2SA708
PNP Silicon Epitaxial Planar Transistor
for medium speed switching and low frequency
amplifier applications.
The transistor is subdivided into three groups, R, O
and Y according to its DC current gain.
1. Emitter 2. Base 3. Collector
TO-92 Plastic Package
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Symbol
-VCBO
-VCEO
-VEBO
-IC
Value
Unit
V
80
60
V
8
700
V
Collector Current
mA
mW
Collector Power Dissipation
Junction Temperature
Ptot
800
O
C
Tj
150
O
C
Storage Temperature Range
Tstg
- 55 to + 150
O
Characteristics at Ta = 25 C
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at -VCE = 2 V, -IC = 50 mA
Current Gain Group
R
O
Y
hFE
hFE
hFE
40
70
120
-
-
-
80
140
240
-
-
-
Collector Base Cutoff Current
at -VCB = 60 V
Emitter Base Cutoff Current
at -VEB = 5 V
Collector Base Breakdown Voltage
at -IC = 100 µA
Collector Emitter Breakdown Voltage
at -IC = 10 mA
-ICBO
-IEBO
-
-
-
-
0.1
µA
µA
V
0.1
-V(BR)CBO
-V(BR)CEO
-V(BR)EBO
-VCEsat
-VBEsat
fT
80
60
8
-
-
-
-
-
-
V
Emitter Base Breakdown Voltage
at -IE = 100 µA
-
V
Collector Emitter Saturation Voltage
at -IC = 500 mA, -IB = 50 mA
Base Emitter Saturation Voltage
at -IC = 500 mA, -IB = 50 mA
Current Gain Bandwidth Product
at -VCE = 10 V, -IC = 50 mA
Output Capacitance
-
0.7
1.1
-
V
-
-
V
-
50
13
MHz
pF
Cob
-
-
at -VCB = 10 V, IE = 0, f = 1 MHz
®
Dated: 15/01/2016 CL Rev: 02