Datasheet > 2SA673_11

2SA673_11

更新时间： 2022-09-16 17:26:08

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	358K
描述
General Purpose Transistor

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数据手册

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2SA673_11 数据手册

2SA673, 2SA673A

PNP

General Purpose Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead free

FEATURES

TO-92

ꢀ

Low frequency amplifier

Complementary pair with 2SC1213 and 2SC1213A

ꢀ

1Emitter

2Collector

3Base

CLASSIFICATION OF h_FE(1)

2SA673-B

2SA673A-B

60~120

2SA673-C

2SA673A-C

100~200

2SA673-D

2SA673A-D

160~320

Product-Rank

Range

Millimeter

REF.

Min.

4.40

4.30

12.70

3.30

0.36

Max.

4.70

3.81

0.56

0.51

1.27 TYP.

1.10

2.42

0.36

2.66

0.76

Collector

Base

Emitter

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

2SA673

2SA673A

2SA673

2SA673A

-35

Collector to Base Voltage

V_CBO

-50

-35

Collector to Emitter Voltage

V_CEO

-50

-4

Emitter to Base Voltage

V_EBO

I_C

°C

Continuous Collector Current

Collector Power Dissipation

Junction, Storage Temperature

-500

P_C

400

T_J, T_STG

150, -55~150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Collector to Base Breakdown 2SA673

-35

-50

-35

-50

-4

V_(BR)CBO

I_C= -10µA, I_E=0

Voltage

2SA673A

2SA673

Collector to Emitter

Breakdown Voltage

V_(BR)CEO

I_C= -1mA, I_B=0

2SA673A

Emitter to Base Breakdown Voltage

Collector Cut - Off Current

V_(BR)EBO

I_CBO

I_E= -10µA, I_C=0

-0.5

320

µA

V_CB= -20V, I_E=0

h_{FE (1)}

V_CE= -3V, I_C=- 10mA

V_CE= -3V, I_C= -500mA

I_C= -150mA, I_B= -15mA

V_CE= -3V, I_C= -10mA

DC Current Gain

h_{FE (2)}

V_CE(sat)

V_BE

Collector to Emitter Saturation Voltage

Collector to Emitter Voltage

-0.6

-0.64

* Pulse test: pulse width ≤300µs, duty cycle≤ 2.0%.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

21-Jan-2011 Rev. C

Page 1 of 2

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