2SA608
PNP Silicon Epitaxial Planar Transistor
for low frequency and general purpose amplifier
applications.
The transistor is subdivided into two groups F and G
according to its DC current gain.
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Symbol
-VCBO
-VCEO
-VEBO
-IC
Value
Unit
50
50
V
V
6
150
V
Collector Current
mA
mA
mW
Collector Current (Pulse)
Power Dissipation
-ICP
400
Ptot
500
O
Junction Temperature
Storage Temperature Range
Tj
150
C
O
C
Tstg
- 55 to + 150
O
Characteristics at Ta = 25 C
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at -VCE = 6 V, -IC = 1 mA
Current Gain Group
F
G
hFE
hFE
hFE
160
280
70
-
-
-
320
560
-
-
-
-
at -VCE = 6 V, -IC = 0.1 mA
Collector Base Cutoff Current
at -VCB = 40 V
-ICBO
-IEBO
-
-
-
100
nA
nA
V
Emitter Base Cutoff Current
at -VEB = 5 V
-
100
Collector Base Breakdown Voltage
at -IC = 10 µA
-V(BR)CBO
-V(BR)CEO
-V(BR)EBO
-VCE(sat)
-VBE(sat)
fT
60
50
6
-
-
-
-
Collector Emitter Breakdown Voltage
at -IC = 1 mA
-
-
V
Emitter Base Breakdown Voltage
at -IE = 10 µA
-
V
Collector Emitter Saturation Voltage
at -IC = 100 mA, -IB = 10 mA
-
0.3
1
-
V
Base Emitter Saturation Voltage
at -IC = 100 mA, -IB = 10 mA
-
-
V
Transition Frequency
at -VCE = 6 V, -IC = 10 mA
-
200
4.5
MHz
pF
Collector Output Capacitance
at -VCB = 6 V, f = 1 MHz
Cob
-
-
®
Dated:17/08/2016 Rev:02