Datasheet > 2SA608

2SA608

更新时间： 2024-11-14 14:53:31

品牌	Logo	应用领域
先科 - SWST		晶体管
页数	文件大小	规格书
1页	42K
描述
小信号晶体管

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2SA608 数据手册

2SA608

PNP Silicon Epitaxial Planar Transistor

for low frequency and general purpose amplifier

applications.

The transistor is subdivided into two groups F and G

according to its DC current gain.

1. Emitter 2. Collector 3. Base

TO-92 Plastic Package

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Symbol

-V_CBO

-V_CEO

-V_EBO

-I_C

Value

Unit

150

Collector Current

Collector Current (Pulse)

Power Dissipation

-I_CP

400

P_tot

500

Junction Temperature

Storage Temperature Range

T_j

150

T_stg

- 55 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at -V_CE= 6 V, -I_C= 1 mA

Current Gain Group

h_FE

160

280

320

560

at -V_CE= 6 V, -I_C= 0.1 mA

Collector Base Cutoff Current

at -V_CB= 40 V

-I_CBO

-I_EBO

100

Emitter Base Cutoff Current

at -V_EB= 5 V

100

Collector Base Breakdown Voltage

at -I_C= 10 µA

-V_(BR)CBO

-V_(BR)CEO

-V_(BR)EBO

-V_CE(sat)

-V_BE(sat)

f_T

Collector Emitter Breakdown Voltage

at -I_C= 1 mA

Emitter Base Breakdown Voltage

at -I_E= 10 µA

Collector Emitter Saturation Voltage

at -I_C= 100 mA, -I_B= 10 mA

0.3

Base Emitter Saturation Voltage

at -I_C= 100 mA, -I_B= 10 mA

Transition Frequency

at -V_CE= 6 V, -I_C= 10 mA

200

4.5

MHz

Collector Output Capacitance

at -V_CB= 6 V, f = 1 MHz

C_ob

Dated：17/08/2016 Rev：02

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2SA608K	SANYO	获取价格	GENERAL PURPOSE AMP, SWITCHING APPLICATIONS
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2SA608KNP	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 100MA I(C) \| TO-92
2SA608KNPD	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 100MA I(C) \| TO-92
2SA608KNPE	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 100MA I(C) \| TO-92
2SA608KNPF	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 100MA I(C) \| TO-92
2SA608KNPG	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 100MA I(C) \| TO-92
2SA608N	TRSYS	获取价格	Plastic-Encapsulated Transistors