Datasheet > 2SA608

2SA608

更新时间： 2023-12-06 20:02:39

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
3页	614K
描述
双极型晶体管

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2SA608 数据手册

2SA608(PNP)

TO-92 Bipolar Transistors

TO-92

1. EMITTER

COLLECTOR

3. BASE

Features

ꢀ

Capable of being used in the low frequency to high

frequency range.

ꢀ

Large current capacity and wide ASO.

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

-40

Units

-30

Dimensions in inches and (millimeters)

-5

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

-100

400

℃

P_C

T_J

150

T_stg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

-40

-30

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-Base breakdown voltage

Collector cut-off current

V_(BR)CBO

I_C=-100μA, I_E=0

V_(BR)CEOI_C=-1mA, I_B=0

V_(BR)EBO

I_CBO

I_E=-100μA, I_C=0

V_CB=-25V, I_E=0

-1

μA

Emitter cut-off current

I_EBO

V_EB=-4V, I_C=0

DC current gain

h_FE

V_CE=-6V, I_C=-1mA

I_C=-50mA, I_B=-5mA

V_CE=-6V, I_C=-10mA

560

-0.5

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

180

MHz

Collector output capacitance

Cob

_CB=-6V, f=1MHz

CLASSIFICATION OF h_FE

Rank

60-120

100-200

160-320

280-560

Range

http://www.lgesemi.com

Revision:20170701-P1

mail:lge@lgesemi.com

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