Datasheet > 2SA562

2SA562

更新时间： 2023-12-06 20:08:01

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
2页	670K
描述
双极型晶体管

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数据手册

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2SA562 数据手册

2SA562(PNP)

TO-92 Bipolar Transistors

TO-92

1. EMITTER

2. COLLECTOR

3. BASE

Features

ꢀ

Excellent h_FElinearlity

Dimensions in inches and (millimeters)

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

Parameter

Value

-35

Units

V_CBO

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

I_C

-30

-5

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

-500

500

℃

P_C

T_j

150

T_stg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V(BR)_CBO

V(BR)_CEO

V(BR)_EBO

I_CBO

Test

conditions

MIN

-35

-30

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C= -100μA , I_E=0

I_C= -1mA , I_B=0

I_E= -100μA, I_C=0

V_CB=-35V, I_E=0

-0.1

240

-0.25

-1

μA

Emitter cut-off current

I_EBO

V_EB= -5V, I_C=0

DC current gain

h_FE

V_CE=-1V, I_C=-100mA

I_C= -100mA, I_B= -10mA

V_CE=-1V,I_C=-100mA

V_CE= -6V, I_C= -20mA

V_CB=-6V,I_E=0,f=1MHz

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

V_BE

Transition frequency

f_T

200

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h^FE

Rank

Range

70-140

120-240

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Revision:20170701-P1

mail:lge@lgesemi.com

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