Datasheet > 2SA553U

2SA553U

更新时间： 2023-12-06 20:02:34

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
5页	815K
描述
功率三极管

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2SA553U 数据手册

2SA553U

PNP Silicon Epitaxial Planar Power Transistor

Features

• Suitable for Middle Power Driver

Absolute Maximum Ratings (T_a= 25

Parameter

)

Symbol

-V_CBO

-V_CEO

-V_EBO

-I_C

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

Peak Collector Current, Pulsed (Pw = 10 ms)

Total Power Dissipation

-I_CM

0.5 ¹⁾

2 ²⁾

P_tot

Junction Temperature

T_j

150

Storage Temperature Range

T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

250 ¹⁾

62.5 ²⁾

Unit

Thermal Resistance from Junction to Ambient

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

²⁾Mounted on a ceramic board (40 × 40 × 0.7 mm).

1 / 5

Dated: 06/07/2023 Rev: 02

12 3 4 5

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