Datasheet > 2SA200

2SA200

更新时间： 2024-11-22 14:50:43

品牌	Logo	应用领域
先科 - SWST		晶体管
页数	文件大小	规格书
2页	277K
描述
小信号晶体管

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2SA200 数据手册

2SA200

PNP Silicon Epitaxial Planar Transistor

for general purpose and switching amplifier

The transistor is subdivided into two group, O

and Y according to its DC current gain.

1. Emitter 2. Collector 3. Base

TO-92 Plastic Package

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

-V_CBO

-V_CEO

-V_EBO

-I_C

500

Base Current

-I_B

100

Power Dissipation

P_tot

625

Junction Temperature

Storage Temperature Range

T_j

150

T_stg

- 55 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at -V_CE= 2 V, -I_C= 50 mA

Current Gain Group

h_FE

120

140

240

at -V_CE= 6 V, -I_C= 400 mA

Collector Base Cutoff Current

at -V_CB= 50 V

-I_CBO

-I_EBO

-V_CE(sat)

-V_BE(on)

f_T

100

0.25

Emitter Base Cutoff Current

at -V_EB= 5 V

Collector Emitter Saturation Voltage

at -I_C= 100 mA, -I_B= 10 mA

Base Emitter on Voltage

at -V_CE= 1 V, -I_C= 100 mA

Transition Frequency

at -V_CE= 6 V, -I_C= 20 mA

200

MHz

Collector Output Capacitance

at -V_CB= 6 V, f = 1 MHz

C_ob

Dated: 16/08/2016 Rev: 02

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