Datasheet > 2SA1945_15

2SA1945_15

更新时间： 2024-09-25 01:07:47

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科信 - KEXIN		/
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2页	891K
描述
PNP Transistors

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数据手册

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2SA1945_15 数据手册

SMD Type

Transistors

PNP Transistors

2SA1945

1.70 0.1

■ Features

● High voltage

● High fT,fT=150MHz(typ)

● High collector current I^CM=-600mA

● Small package for mounting

● Complements to 2SC5211

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

VCBO

VCEO

VEBO

-55

-50

-4

Collector Current - Continuous

Colletor Current - Pulse

-400

-600

0.5

Collector Power Dissipation

Junction Temperature

150

℃

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

-55

-50

-4

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= -100 μA， I

Ic= -1 mA，RBE= ∞

= -100μA， I =0

^CB= -25 V , I =0

EB= -4V , I =0

E=0

CBO

EBO

-1

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

=-200mA, I

=-10mA

-0.17 -0.5

-1.2

=-200mA, I

hFE

CE= -4V, I

C= -100mA

500

Transition frequency

CE= -10V, I

E= 10mA

150

MHz

■ Classification of hfe

Type

Range

Marking

2SA1945-D

90-180

2SA1945-E

150-300

2SA1945-F

250-500

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