Datasheet > 2SA1923

2SA1923

更新时间： 2024-11-18 12:32:35

品牌	Logo	应用领域
TYSEMI		晶体晶体管开关
页数	文件大小	规格书
2页	128K
描述
High Voltage:VCBO=-400V Low Saturation Voltage:VCE(sat)=-1V(Max.)

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中文翻译

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数据手册

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2SA1923 数据手册

SSMMDD TTyyppee

Transistors

Product specification

2SA1923

TO-252

Unit: mm

6.50^+0.15

-0.15

2.30^+0.1

-0.1

5.30^+0.2

0.50^+0.8

-0.7

-0.2

Features

High Voltage:V^CBO=-400V

Low Saturation Voltage:V^CE(sat)=-1V(Max.)

I^C=-100mA,I^B=-10mA

0.127

max

0.80^+0.1

-0.1

0.60^+0.1

2.3

4.60^+0.15

-0.1

1 Base

-0.15

2 Collector

3 Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

-400

-7

Unit

-0.5

Collector Current (Pulse)

Base Current

I^CP

-1

I^B

-0.25

Collector Dissipation

T^c=25

P^C

Junction Temperature

Storage Temperature

T^j

150

T^stg

-55 to 150

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中文翻译

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