2 S A1 9 0 9
Absolute maximum ratings (Ta=25°C)
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5101)
Application : Audio and General Purpose
External Dimensions FM100(TO3PF)
■Electrical Characteristics
■
(Ta=25°C)
Symbol
Ratings
Unit
Ratings
–10max
–10max
–140min
50min
Conditions
Symbol
ICBO
Unit
µA
µA
V
±0.2
5.5
±0.2
15.6
±0.2
3.45
VCBO
VCEO
VEBO
IC
–140
V
VCB=–140V
VEB=–6V
–140
V
IEBO
–6
V
V(BR)CEO
hFE
IC=–50mA
±0.2
ø3.3
VCE=–4V, IC=–3A
IC=–5A, IB=–0.5A
VCE=–12V, IE=0.5A
VCB=–10V, f=1MHz
–10
–4
A
a
b
IB
–0.5max
20typ
VCE(sat)
fT
V
MHz
pF
A
PC
80(Tc=25°C)
150
W
°C
°C
1.75
2.15
0.8
Tj
400typ
COB
Tstg
to
–55 +150
to
to
to
hFE Rank O(50 100), P(70 140), Y(90 180)
+0.2
-0.1
1.05
+0.2
±0.1
1.5
±0.1
0.65
-0.1
5.45
5.45
1.5
3.35
■Typical Switching Characteristics (Common Emitter)
4.4
C
RL
(Ω)
IC
(A)
VBB1
(V)
IB2
(A)
ton
(µs)
VCC
(V)
VBB2
(V)
IB1
(A)
tstg
(µs)
tf
(µs)
Weight : Approx 6.0g
a. Part No.
b. Lot No.
B
E
12
–10
0.17typ
–60
–5
5
–0.5
0.5
1.86typ 0.27typ
–
–
–
IC VCE Characteristics (Typical)
VCE(sat) IB Characteristics (Typical)
IC VBE Temperature Characteristics (Typical)
(VCE=–4V)
–10
–8
–3
–10
–8
–6
–4
–2
–1
–6
–4
–2
0
–25mA
–2
0
IC=–10A
IB=–10mA
–5A
0
0
–1
–2
–3
–4
0
–0.5
–1.0
–1.5
–2.0
0
–1
–1.5
Collector-Emitter Voltage VCE(V)
Base Current IB(A)
Base-Emittor Voltage VBE(V)
–
–
–
j-a t Characteristics
hFE IC Characteristics (Typical)
hFE IC Temperature Characteristics (Typical)
θ
(VCE=–4V)
(VCE=–4V)
200
3
200
125˚C
Typ
100
100
1
25˚C
–30˚C
0.5
50
50
30
20
–0.02
0.1
1
10
100
Time t(ms)
1000 2000
–0.1
–0.5
–1
–5
–10
–0.02
–0.1
–0.5 –1
–5
–10
Collector Current IC(A)
Collector Current IC(A)
–
fT IE Characteristics (Typical)
Safe Operating Area (Single Pulse)
–
Pc Ta Derating
(VCE=–12V)
80
30
20
–30
–10
–5
60
40
Typ
–1
10
–0.5
20
Without Heatsink
Natural Cooling
Without Heatsink
3.5
0
0
0.02
–0.1
–3
0.1
1
10
–5
–10
–50
–100 –200
0
25
50
75
100
125
150
Collector-Emitter Voltage VCE(V)
Emitter Current IE(A)
Ambient Temperature Ta(˚C)
37