5秒后页面跳转
2SA1909_07 PDF预览

2SA1909_07

更新时间: 2024-11-18 07:29:47
品牌 Logo 应用领域
三垦 - SANKEN 晶体晶体管
页数 文件大小 规格书
1页 29K
描述
Silicon PNP Epitaxial Planar Transistor

2SA1909_07 数据手册

  
2 S A1 9 0 9  
Absolute maximum ratings (Ta=25°C)  
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5101)  
Application : Audio and General Purpose  
External Dimensions FM100(TO3PF)  
Electrical Characteristics  
(Ta=25°C)  
Symbol  
Ratings  
Unit  
Ratings  
–10max  
–10max  
–140min  
50min  
Conditions  
Symbol  
ICBO  
Unit  
µA  
µA  
V
±0.2  
5.5  
±0.2  
15.6  
±0.2  
3.45  
VCBO  
VCEO  
VEBO  
IC  
–140  
V
VCB=140V  
VEB=6V  
–140  
V
IEBO  
–6  
V
V(BR)CEO  
hFE  
IC=50mA  
±0.2  
ø3.3  
VCE=4V, IC=3A  
IC=5A, IB=0.5A  
VCE=12V, IE=0.5A  
VCB=10V, f=1MHz  
–10  
–4  
A
a
b
IB  
–0.5max  
20typ  
VCE(sat)  
fT  
V
MHz  
pF  
A
PC  
80(Tc=25°C)  
150  
W
°C  
°C  
1.75  
2.15  
0.8  
Tj  
400typ  
COB  
Tstg  
to  
–55 +150  
to  
to  
to  
hFE Rank O(50 100), P(70 140), Y(90 180)  
+0.2  
-0.1  
1.05  
+0.2  
±0.1  
1.5  
±0.1  
0.65  
-0.1  
5.45  
5.45  
1.5  
3.35  
Typical Switching Characteristics (Common Emitter)  
4.4  
C
RL  
()  
IC  
(A)  
VBB1  
(V)  
IB2  
(A)  
ton  
(µs)  
VCC  
(V)  
VBB2  
(V)  
IB1  
(A)  
tstg  
(µs)  
tf  
(µs)  
Weight : Approx 6.0g  
a. Part No.  
b. Lot No.  
B
E
12  
–10  
0.17typ  
–60  
–5  
5
–0.5  
0.5  
1.86typ 0.27typ  
IC VCE Characteristics (Typical)  
VCE(sat) IB Characteristics (Typical)  
IC VBE Temperature Characteristics (Typical)  
(VCE=–4V)  
–10  
–8  
–3  
–10  
–8  
–6  
–4  
–2  
–1  
–6  
–4  
–2  
0
–25mA  
–2  
0
IC=–10A  
IB=–10mA  
–5A  
0
0
–1  
–2  
–3  
–4  
0
–0.5  
–1.0  
–1.5  
–2.0  
0
–1  
–1.5  
Collector-Emitter Voltage VCE(V)  
Base Current IB(A)  
Base-Emittor Voltage VBE(V)  
j-a t Characteristics  
hFE IC Characteristics (Typical)  
hFE IC Temperature Characteristics (Typical)  
θ
(VCE=–4V)  
(VCE=–4V)  
200  
3
200  
125˚C  
Typ  
100  
100  
1
25˚C  
–30˚C  
0.5  
50  
50  
30  
20  
–0.02  
0.1  
1
10  
100  
Time t(ms)  
1000 2000  
–0.1  
–0.5  
–1  
–5  
–10  
–0.02  
–0.1  
–0.5 –1  
–5  
–10  
Collector Current IC(A)  
Collector Current IC(A)  
fT IE Characteristics (Typical)  
Safe Operating Area (Single Pulse)  
Pc Ta Derating  
(VCE=–12V)  
80  
30  
20  
–30  
–10  
–5  
60  
40  
Typ  
–1  
10  
–0.5  
20  
Without Heatsink  
Natural Cooling  
Without Heatsink  
3.5  
0
0
0.02  
–0.1  
–3  
0.1  
1
10  
–5  
–10  
–50  
–100 –200  
0
25  
50  
75  
100  
125  
150  
Collector-Emitter Voltage VCE(V)  
Emitter Current IE(A)  
Ambient Temperature Ta(˚C)  
37  

与2SA1909_07相关器件

型号 品牌 获取价格 描述 数据表
2SA1909O SANKEN

获取价格

暂无描述
2SA1909P ISC

获取价格

暂无描述
2SA1909Y SANKEN

获取价格

Power Bipolar Transistor, 10A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SA1916A ETC

获取价格

2SA1920 ETC

获取价格

TRANSISTOR | BJT | PNP | 600V V(BR)CEO | 200MA I(C) | SIP
2SA1920N ETC

获取价格

TRANSISTOR | BJT | PNP | 600V V(BR)CEO | 200MA I(C) | SIP
2SA1920P ROHM

获取价格

Transistor
2SA1920Q ETC

获取价格

TRANSISTOR | BJT | PNP | 600V V(BR)CEO | 200MA I(C) | SIP
2SA1920TV2/NP ROHM

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 600V V(BR)CEO, 1-Element, PNP, Silicon
2SA1920TV2/P ROHM

获取价格

100mA, 600V, PNP, Si, SMALL SIGNAL TRANSISTOR