Datasheet > 暂无类别数据> 2SA1908

2SA1908

更新时间： 2024-11-18 07:29:47

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管放大器局域网
页数	文件大小	规格书
4页	77K
描述
Silicon PNP Power Transistors

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中文翻译

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2SA1908 数据手册

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SA1908

DESCRIPTION

·With TO-3PML package

·Complement to type 2SC5100

APPLICATIONS

·Audio and general purpose

PINNING

DESCRIPTION

Emitter

Collector

Base

Fig.1 simplified outline (TO-3PML) and symbol

Absolute maximum ratings(Tc=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

-120

-6

UNIT

Open base

Open collector

-8

I_B

Base current

-3

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

T_j

150

T_stg

-55~150

12 3 4

中文翻译

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2SA1908O	SANKEN	获取价格	Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
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2SA1908Y	SANKEN	获取价格	Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
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