Datasheet > 2SA1890-R

2SA1890-R

更新时间： 2024-09-24 01:12:11

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科信 - KEXIN		/
页数	文件大小	规格书
2页	915K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SA1890-R 数据手册

SMD Type

Transistors

PNP Transistors

2SA1890

■Features

1.70 0.1

●Low collector to emitter saturation voltage VCE(sat)

●High collector to emitter voltage V^CEO

● Complementary to 2SC5026.

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

■Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

VCBO

VCEO

VEBO

-80

-5

Collector Current - Continuous

Colletor Current - Pulse

-1

-1.5

Collector Power Dissipation

Junction Temperature

℃

150

Storage Temperature range

stg

-55 to 150

■Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Ic= -100 μA，I =0

Ic= -1 mA，I = 0

Min

-80

-5

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

E= -100μA，I

C=0

CBO

EBO

CB= -40 V , I

EB= -4V , I

-0.1

-0.3

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

BE(sat)

=-500mA, I

=-50mA

-0.2

C=-500mA, I

-0.85 -1.2

340

CE= -2V, I

= -100mA

= -500mA

120

DC current gain

hFE

Collector output capacitance

Transition frequency

CB= -10V, I

^CE= -10V, I

= 0,f=1MHz

= 50mA,f=200MHz

120

MHz

■Classification of hfe(1)

Type

Range

Marking

2SA1890-Q

120-240

1ZQ

2SA1890-R

170-340

1ZR

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