Datasheet > 2SA1887_09

2SA1887_09

更新时间： 2024-09-23 07:29:47

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
5页	152K
描述
High-Current Switching Applications

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2SA1887_09 数据手册

2SA1887

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

2SA1887

High-Current Switching Applications

Unit: mm

•

Low collector saturation voltage:

= −0.4 V (max)

CE (sat)

at I = −5 A

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−80

−50

Collector-emitter voltage

Emitter-base voltage

Collector current

−7

−10

Base current

-1

Ta = 25°C

Tc = 25°C

2.0

Collector power

dissipation

Junction temperature

150

°C

JEDEC

JEITA

―

Storage temperature range

stg

−55 to 150

SC-67

2-10R1A

TOSHIBA

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

Weight: 1.7 g (typ.)

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2009-09-30

12 3 4 5

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