生命周期: | Obsolete | Reach Compliance Code: | unknown |
风险等级: | 5.84 | 最大集电极电流 (IC): | 0.1 A |
基于收集器的最大容量: | 1.2 pF | 集电极-发射极最大电压: | 10 V |
配置: | SINGLE | 最高频带: | ULTRA HIGH FREQUENCY BAND |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 650 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SA1886T107S | ROHM |
获取价格 |
UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR | |
2SA1887 | ISC |
获取价格 |
Silicon PNP Power Transistors | |
2SA1887 | SAVANTIC |
获取价格 |
Silicon PNP Power Transistors | |
2SA1887 | JMNIC |
获取价格 |
Silicon PNP Power Transistors | |
2SA1887 | TOSHIBA |
获取价格 |
TRANSISTOR (HIGH CURRENT SWITCHING APPLICATIONS) | |
2SA1887_09 | TOSHIBA |
获取价格 |
High-Current Switching Applications | |
2SA1889 | ETC |
获取价格 |
||
2SA1889B | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 200MA I(C) | TO-126 | |
2SA1889C | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 200MA I(C) | TO-126 | |
2SA1890 | KEXIN |
获取价格 |
Silicon PNP Epitaxial Planar |