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2SA1880 PDF预览

2SA1880

更新时间: 2024-11-20 06:18:11
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 113K
描述
Silicon PNP Power Transistors

2SA1880 数据手册

 浏览型号2SA1880的Datasheet PDF文件第2页浏览型号2SA1880的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
2SA1880  
DESCRIPTION  
·With ITO-220 package  
·Switching power transistor  
·Low collector saturation voltage  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Collector  
Emitter  
Fig.1 simplified outline (ITO-220) and symbol  
3
Absolute maximum ratings(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
Open emitter  
VALUE  
-80  
UNIT  
V
Open base  
-80  
V
Open collector  
-7  
V
-10  
A
ICM  
Collector current-Peak  
Base current  
-20  
A
IB  
-1.5  
-2  
A
IBM  
Base current-Peak  
A
PT  
Total power dissipation  
Junction temperature  
Storage temperature  
TC=25  
25  
W
Tj  
150  
-55~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Rth j-C  
Thermal resistance junction case  
5.0  
/W  

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2SA1882S ETC

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TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 1.5A I(C) | SOT-89
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High-Speed Switching Applications
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1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE