Datasheet > 2SA1860_07

2SA1860_07

更新时间： 2022-09-16 17:08:43

品牌	Logo	应用领域
三垦 - SANKEN		晶体晶体管
页数	文件大小	规格书
1页	30K
描述
Silicon PNP Epitaxial Planar Transistor

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数据手册

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2SA1860_07 数据手册

LAP T 2 S A1 8 6 0

Absolute maximum ratings

(Ta=25°C)

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4886)

Application : Audio and General Purpose

External Dimensions FM100(TO3PF)

(Ta=25°C)

■

■Electrical Characteristics

Ratings

Symbol

Ratings

Unit

Conditions

Unit

µA

Symbol

I^CBO

±0.2

5.5

±0.2

15.6

±0.2

3.45

–100max

–150min

50min

V^CBO

VCEO

VEBO

V^CB=–150V

V^EB=–5V

–150

IEBO

I^C=–25mA

–5

V(BR)CEO

hFE

±0.2

ø3.3

V^CE=–4V, IC=–5A

I^C=–5A, IB=–500mA

V^CE=–12V, IE=2A

V^CB=–10V, f=1MHz

–14

–3

–2.0max

50typ

MHz

VCE(sat)

80(Tc=25°C)

150

°C

1.75

0.8

400typ

COB

2.15

+0.2

Tstg

–55 +150

hFE Rank O(50 100), P(70 140), Y(90 180)

1.05

-0.1

+0.2

±0.1

1.5

±0.1

0.65

-0.1

5.45

1.5

3.35

■Typical Switching Characteristics (Common Emitter)

4.4

Weight : Approx 6.5g

a. Part No.

b. Lot No.

V^CC

(V)

R^L

(Ω)

I^C

(A)

VBB1

(V)

V^BB2

(V)

I^B1

(mA)

I^B2

(mA)

ton

(µs)

tstg

(µs)

–60

–5

–10

–500

500

0.25typ 0.85typ

0.2typ

–

IC VCE Characteristics (Typical)

VCE(sat) IB Characteristics (Typical)

IC VBE Temperature Characteristics (Typical)

(VCE=–4V)

–14

–10

–3

–10

–5

–2

–5

–1

IC=–10A

I^B=–20mA

–5A

–1

–2

–3

–4

–0.2

–0.4

–0.6

–0.8

–1.0

–1

–2

Collector-Emitter Voltage V^CE(V)

Base Current I^B(A)

Base-Emittor Voltage V^BE(V)

–

j-a t Characteristics

hFE IC Characteristics (Typical)

hFE IC Temperature Characteristics (Typical)

(VCE=–4V)

200

125˚C

100

Typ

25˚C

100

0.5

–30˚C

–0.02

0.1

–0.02

–0.1

–0.5

–1

–5 –10 –14

100

Time t(ms)

1000 2000

–0.1

–0.5 –1

–5 –10 –14

Collector Current I^C(A)

–

f^TIE Characteristics (Typical)

Safe Operating Area (Single Pulse)

–

Pc Ta Derating

(VCE=–12V)

–40

–10

–5

Typ

–1

–0.5

Without Heatsink

Natural Cooling

–0.1

Without Heatsink

3.5

–0.05

0.02

0.1

–2

–5

–10

–50

–100 –200

100

125

150

Collector-Emitter Voltage V^CE(V)

Emitter Current I^E(A)

Ambient Temperature Ta(˚C)

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